The mechanism behind the formation of alloyed ohmic contacts to p-type InP doped in the 1016 cm-3 range has been investigated. Techniques used for – characterising the contacts include the scanning electron microscope (SEM), specific contact resistance measurements, x-ray diffractometry (XRD)e, nergy dispersive x-ray analysis (EDAXa) nd Auger electron spectroscopy (AES).B oth temperature and time of annealing were varied during the study. The results obtained using our annealing procedures indicate that the optimum contact resistance is associated with the formation of an Au-In phase. The atomic percentage of indium increases with increasing annealing temperature whilst that of gold drops. Zinc phases appear only at the higher annealing temperatures used.
Copyright © 2023 Author(s) retain the copyright of this article.
This article is published under the terms of the Creative Commons Attribution License 4.0
If you like this article, see others like it:
- The Effect of Pressure, Bending and Annealing Temperature on the Mechanical and Optoelectronic Properties of Perovskite Solar Cells
- The Physics of Stars and their Astronomical Identification
- The Growth and Characterization of CdS Thinfilm by Solution Technique
- Terrestrial Stability of ITO/INP Solar Cells
- Characterization of Zn/Au Back Contact to Low-doped P-InP